An acoustic method for determining the parameters of fast surface in semiconductors states
Abstract
The paper presents an acoustic method for determining the parameters of fast surface states in semiconductors. This method uses the interactions of the photon-electron type for determining both the effective carrier life-time τ influenced by the fast surface states and the velocity g of the carrier trapping by surface traps. Some experimental results of the parameters r and g on a real (111) Si surface, obtained by this method of investigation are presented.References
[1] V. TSERU, F. VOLKENSHTEYN, Vlyanye obwucheniya na poverkhnostnye svoystva powuprovodnikov, Nauka, Moscow, 1980.
[2] Z. CEROWSKI, The depth of penetration of the electric field induced by a surface acoustic wave in a piezoelectricsemiconduetor system, Archives of Acoustics, 5, 4, 337-346 (1980).
[3] Z. CEROWSKI, The influence of the electric field on surface wave propagation in a piezoelectric-semiconductor system, Archives of Acoustics, 5, 4, 337-346 (1980).
[4] B. DAVARI, P. DAS, Semiconductor surface characterization using transverse acoustoelectric voltage versus voltage measurements, J. Appl. Phys. 54, 1, 415-420 (1983).
[2] Z. CEROWSKI, The depth of penetration of the electric field induced by a surface acoustic wave in a piezoelectricsemiconduetor system, Archives of Acoustics, 5, 4, 337-346 (1980).
[3] Z. CEROWSKI, The influence of the electric field on surface wave propagation in a piezoelectric-semiconductor system, Archives of Acoustics, 5, 4, 337-346 (1980).
[4] B. DAVARI, P. DAS, Semiconductor surface characterization using transverse acoustoelectric voltage versus voltage measurements, J. Appl. Phys. 54, 1, 415-420 (1983).
