Investigations concerning fast surface states of semiconductors by means of acoustic methods
Abstract
The paper deals with the results of investigations an n-Si surfaces, obtained by determining acoustically the parameters of fast surface states in semiconductors. This new method is theoretically based on the analyses of the influence of surface states in a semiconductor on the propagation of a Rayleigh surface wave in a layer system of piezoelectric and semiconducting layers. It is possible to determine the effective life time τ of the charge carrier of fast surface states, as well as the velocity of recombination, g, of the carriers in these states.References
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[2] A. MANY, Y. GOLDSTEIN, N. GROVER, Semiconductor surface, 2 ed. North-Holland, New York 1971.
[3] A. OPILSKI, The influence of the surface states on the propagation of ultra- and hypersonic surface waves in semiconductors (in Polish), Zeszyty Naukowe Politechniki Slaskiej, Seria: Matematyka - Fizyka, 17 (1976).
[4] A. OPILSKI, T. PUSTELNY, The new acoustic method of determination of the fast surface states parameters in semiconductors, Archives of Acoustics, 10. 2 (1985).
