The depth of penetration of the electric field induced by a surface acoustic wave in a piezoelectric semiconductor system
Abstract
This paper presents calculations of the penetration depth of the electric field accompanying an acoustic wave for penetration into a semiconductor layer over the plane of propagation when a dc electric field is applied to the piezoelectric – semiconductor system perpendicular to the propagation direction of the wave.References
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[2] Ju. W. GULAJEW, B. I. PUSTOWOJT, Usilenie powierchnostnych woln w poluprowodnikach, ZETF, 47, 2251 (1964).
[3] A. M. KMITA, A. W. MIEDWIED, Akustoelekiriczeskij efekt w sloistoj strukturie piezoelektrik – poluprowodnik, Fiz. Twied. Tiela, 14, 9, 2646 (1972).
[4] A. OPILSKI, The influence of the surface states on the propagation of ultra- and hypersonic surface waves in semiconductors (in Polish), Zeszyty Naukowe Politechniki Śląskiej, Seria Matematyka-Fizyka, 17 (1975).
